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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
S9011
TRANSISTORNPN (c)
TO 92
FEATURE Power dissipation PCM : 0.31 W Tamb=25ae(c) Collector current ICM: 0.03 A Collector-base voltage V(BR)CBO : 30 V Operating and storage junction temperature range Tj, Tstg: -55aeto +150ae
1.EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS Tamb=25ae
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICBO IEBO hFE(1) VCE(sat) VBE(sat)
unless
Test
otherwise
specified(c)
TYP MAX UNIT V V V 0.1 0.1 0.1 |I A |I A |I A
conditions
MIN 30 20 4
Ic= 100|I IE=0 A IC= 0.1 mA , IB=0 IE= 100|I AIC=0 VCB=16V , IE=0 VCB=16V , IE=0 VEB= 3.5V, IC=0 VCE=5V, IC=1mA IC= 10 mA, IB= 1mA IC= 10 mA, IB= 1mA VCE=5V,IC=1mA, f=30MHz
28
270 0.3 1 V V
Transition frequency
fT
150
MHz
CLASSIFICATION OF h FE(1)
Rank Range D 28-45 E 39-60 F 54-80 G 72-108 H 97-146 I 132-198 J 180-270
TO-92 PACKAGE OUTLINE DIMENSIONS
D
D1
A
A1
E
b |O
e e1
Symbol A A1 b c D D1 E e e1 L O
Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min
L
Dimensions In Inches Max 0.146 0.055 0.022 0.020 0.185 0.185 0.050TYP 0.096 0.555 0.000 0.104 0.571 0.063 0.015 0.130 0.043 0.015 0.014 0.173 0.135 0.169
C

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